US 11,810,802 B2
Substrate support in a millisecond anneal system
Joseph Cibere, Burnaby (CA)
Assigned to BEIJING E-TOWN SEMICONDUCTOR TECHNOLOGY CO., LTD., Beijing (CN); and MATTISON TECHNOLOGY, INC, Fremont, CA (US)
Filed by Mattson Technology, Inc., Fremont, CA (US); and Beijing E-Town Semiconductor Technology Co., Ltd., Beijing (CN)
Filed on Jul. 27, 2020, as Appl. No. 16/939,143.
Application 16/939,143 is a division of application No. 15/378,509, filed on Dec. 14, 2016, granted, now 10,734,262.
Claims priority of provisional application 62/272,841, filed on Dec. 30, 2015.
Prior Publication US 2020/0357671 A1, Nov. 12, 2020
Int. Cl. H01L 21/67 (2006.01); G01R 31/28 (2006.01); G01N 19/08 (2006.01)
CPC H01L 21/6719 (2013.01) [G01R 31/2831 (2013.01); H01L 21/67115 (2013.01); H01L 21/67248 (2013.01); G01N 19/08 (2013.01); H01L 21/67288 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A method of determining local contact stress on a substrate resulting from a support structure in a thermal processing system, the method comprising:
obtaining, by one or more processor circuits, a plurality of surface normal estimates for a substrate over a time period;
generating, by the one or more processor circuits, a model specifying a bottom surface profile of the substrate over time based at least in part on the plurality of surface normal estimates; and
determining, by the one or more processor circuits, data indicative of local contact stress at a point of contact between the substrate and a support structure based at least in part on the mode;
modifying thermal processing in the thermal processing system based at least in part on the data indicative of local contact stress.