US 11,810,770 B2
Methods and apparatus for controlling ion fraction in physical vapor deposition processes
Xiaodong Wang, San Jose, CA (US); Joung Joo Lee, San Jose, CA (US); Fuhong Zhang, Cupertino, CA (US); Martin Lee Riker, Milpitas, CA (US); Keith A. Miller, Mountain View, CA (US); William Fruchterman, Santa Clara, CA (US); Rongjun Wang, Dublin, CA (US); Adolph Miller Allen, Oakland, CA (US); Shouyin Zhang, Livermore, CA (US); and Xianmin Tang, San Jose, CA (US)
Assigned to APPLIED MATERIALS, INC., Santa Clara, CA (US)
Filed by APPLIED MATERIALS, INC., Santa Clara, CA (US)
Filed on Sep. 30, 2021, as Appl. No. 17/490,840.
Application 17/490,840 is a continuation of application No. 17/101,933, filed on Nov. 23, 2020, abandoned.
Application 17/101,933 is a continuation of application No. 15/448,996, filed on Mar. 3, 2017, granted, now 11,037,768, issued on Jun. 15, 2021.
Claims priority of provisional application 62/304,173, filed on Mar. 5, 2016.
Prior Publication US 2022/0020577 A1, Jan. 20, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01J 37/34 (2006.01); C23C 14/35 (2006.01); C23C 14/34 (2006.01); C23C 14/54 (2006.01)
CPC H01J 37/3458 (2013.01) [C23C 14/345 (2013.01); C23C 14/351 (2013.01); C23C 14/54 (2013.01); H01J 37/3402 (2013.01); H01J 37/345 (2013.01); H01J 37/3405 (2013.01); H01J 37/3411 (2013.01); H01J 37/3441 (2013.01); H01J 37/3447 (2013.01); H01J 37/3452 (2013.01); H01J 37/3455 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A process chamber for processing a substrate, comprising:
a body including a ground adapter and a sidewall extending from the ground adapter, wherein the body has an interior volume;
a target to be sputtered disposed in the interior volume and supported by the ground adapter;
a substrate support disposed in the interior volume opposite the target and having a support surface configured to support the substrate;
a collimator disposed in the interior volume between the target and the substrate support;
a first electromagnet disposed about the body adjacent the ground adapter, wherein the first electromagnet is configured to generate a magnetic field to direct ions vertically through the collimator;
a second electromagnet disposed about the body above the support surface of the substrate support and entirely below the collimator and spaced vertically below the first electromagnet, wherein the second electromagnet is configured to generate a magnetic field to direct ions vertically toward the support surface; and
a third electromagnet disposed about the body and spaced vertically between the collimator and the second electromagnet, wherein the third electromagnet is configured to generate a magnetic field to direct ions vertically toward the support surface.