CPC H01J 37/3458 (2013.01) [C23C 14/345 (2013.01); C23C 14/351 (2013.01); C23C 14/54 (2013.01); H01J 37/3402 (2013.01); H01J 37/345 (2013.01); H01J 37/3405 (2013.01); H01J 37/3411 (2013.01); H01J 37/3441 (2013.01); H01J 37/3447 (2013.01); H01J 37/3452 (2013.01); H01J 37/3455 (2013.01)] | 20 Claims |
1. A process chamber for processing a substrate, comprising:
a body including a ground adapter and a sidewall extending from the ground adapter, wherein the body has an interior volume;
a target to be sputtered disposed in the interior volume and supported by the ground adapter;
a substrate support disposed in the interior volume opposite the target and having a support surface configured to support the substrate;
a collimator disposed in the interior volume between the target and the substrate support;
a first electromagnet disposed about the body adjacent the ground adapter, wherein the first electromagnet is configured to generate a magnetic field to direct ions vertically through the collimator;
a second electromagnet disposed about the body above the support surface of the substrate support and entirely below the collimator and spaced vertically below the first electromagnet, wherein the second electromagnet is configured to generate a magnetic field to direct ions vertically toward the support surface; and
a third electromagnet disposed about the body and spaced vertically between the collimator and the second electromagnet, wherein the third electromagnet is configured to generate a magnetic field to direct ions vertically toward the support surface.
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