| CPC H01J 37/3211 (2013.01) [C23C 16/517 (2013.01); H01J 27/16 (2013.01); H01J 37/321 (2013.01); H01J 37/3266 (2013.01); H01L 21/30655 (2013.01); H01L 21/67109 (2013.01)] | 21 Claims |
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1. A plasma processing apparatus comprising:
a chamber having a space therein and configured to process a target object loaded into the space by plasma generated in the space;
a gas supply source configured to supply a processing gas into the space of the chamber;
a high frequency antenna having a plurality of lines adjacent to each other and configured to generate the plasma in the space by an induced electric field generated in the space by a current flowing in the lines;
a plurality of holders configured to hold the lines of the high frequency antenna;
a plurality of support members configured to support the plurality of holders;
a dielectric plate forming an upper portion of the chamber; and
a shield member provided to cover the high frequency antenna, the shield member disposed above the dielectric plate,
wherein each of the holders holds only one of the lines and the holders are arranged on the respective lines of the high frequency antenna such that adjacent holders are spaced from each other by a gap of a predetermined distance, the predetermined distance between adjacent holders being greater than a distance between adjacent lines held by the adjacent holders,
the support members are each provided for holders of adjacent lines, and each support member supports the holders of the adjacent lines with respect to at least one of the dielectric plate and the shield member,
each of the support members has a connecting portion, the connecting portion extending along an arrangement direction of the holders of the adjacent lines when seen from above, and
the connecting portion is connected to at least three holders of the adjacent lines.
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