US 11,810,700 B2
In-plane magnetized film, in-plane magnetized film multilayer structure, hard bias layer, magnetoresistive element, and sputtering target
Kim Kong Tham, Tsukuba (JP); Ryousuke Kushibiki, Tsukuba (JP); Masahiro Aono, Tsukuba (JP); and Yasunobu Watanabe, Tsukuba (JP)
Assigned to TANAKA KIKINZOKU KOGYO K.K., Tokyo (JP)
Appl. No. 17/289,500
Filed by TANAKA KIKINZOKU KOGYO K.K., Tokyo (JP)
PCT Filed Oct. 30, 2019, PCT No. PCT/JP2019/042628
§ 371(c)(1), (2) Date Apr. 28, 2021,
PCT Pub. No. WO2020/090914, PCT Pub. Date May 7, 2020.
Claims priority of application No. 2018-204303 (JP), filed on Oct. 30, 2018.
Prior Publication US 2021/0391105 A1, Dec. 16, 2021
Int. Cl. H01F 10/16 (2006.01); C23C 14/34 (2006.01); H01F 41/18 (2006.01)
CPC H01F 10/16 (2013.01) [C23C 14/3407 (2013.01); H01F 41/18 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An in-plane magnetized film for use as a hard bias layer of a magnetoresistive element, the in-plane magnetized film comprising metal Co, metal Pt, and an oxide, wherein
the in-plane magnetized film contains the metal Co in an amount of 55 at % or more and less than 95 at % and the metal Pt in an amount of more than 5 at % and 45 at % or less relative to a total of metal components of the in-plane magnetized film,
the in-plane magnetized film contains the oxide in an amount of 10 vol % or more and 42 vol % or less relative to a whole amount of the in-plane magnetized film, and
the in-plane magnetized film has a thickness of 20 nm or more and 80 nm or less.