US 11,810,627 B2
Selective read disturb sampling
Kishore Kumar Muchherla, Fremont, CA (US); Harish R. Singidi, Fremont, CA (US); Renato C. Padilla, Folsom, CA (US); Vamsi Pavan Rayaprolu, San Jose, CA (US); Ashutosh Malshe, Fremont, CA (US); and Sampath K. Ratnam, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Aug. 12, 2022, as Appl. No. 17/886,884.
Application 17/886,884 is a continuation of application No. 16/718,051, filed on Dec. 17, 2019, granted, now 11,450,392.
Prior Publication US 2022/0383962 A1, Dec. 1, 2022
Int. Cl. G11C 16/34 (2006.01); G11C 16/08 (2006.01); G06F 11/30 (2006.01); G06F 11/07 (2006.01)
CPC G11C 16/3431 (2013.01) [G06F 11/076 (2013.01); G06F 11/3037 (2013.01); G11C 16/08 (2013.01); G11C 16/349 (2013.01); G11C 16/3427 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A system comprising:
a memory device; and
a processing device, operatively coupled with the memory device, to perform operations comprising:
determining an occurrence of a triggering event for a segment of the memory device;
determining a number of scan operations performed on the segment of the memory device; and
based on the number of scan operations performed on the segment of the memory device, identifying a first set of wordlines of the segment and performing a first data integrity scan to determine one or more first error rates corresponding to the first set of wordlines of the segment, the first set of wordlines comprising first alternating pairs of adjacent wordlines, wherein the first set of wordlines is interleaved with but excludes a second set of wordlines.