US 11,810,622 B2
Detecting failure of a thermal sensor in a memory device
Christopher J. Bueb, Folsom, CA (US); and Aravind Ramamoorthy, Rocklin, CA (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Feb. 22, 2022, as Appl. No. 17/677,332.
Application 17/677,332 is a continuation of application No. 17/003,829, filed on Aug. 26, 2020, granted, now 11,282,577.
Prior Publication US 2022/0180935 A1, Jun. 9, 2022
Int. Cl. G11C 16/04 (2006.01); G11C 16/22 (2006.01); G11C 11/56 (2006.01); G11C 16/26 (2006.01); G11C 16/10 (2006.01)
CPC G11C 16/22 (2013.01) [G11C 11/5628 (2013.01); G11C 11/5642 (2013.01); G11C 11/5671 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A system comprising:
a memory device comprising a plurality of memory cells; and
a processing device, operatively coupled with the memory device, to perform operations comprising:
comparing respective values of a subset of the plurality of memory cells to a pattern of pre-programmed memory cells on the memory device, wherein the pattern of pre-programmed memory cells comprises representations of values of the pattern of pre-programmed memory cells when a temperature criterion is satisfied;
responsive to determining that at least a threshold number of the respective values of the subset matches the pattern of pre-programmed memory cells, identifying a temperature reading from a thermal sensor coupled to the memory device; and
responsive to determining that the temperature reading does not correspond to the temperature criterion, determining that the thermal sensor has failed.