US 11,810,611 B2
Method and system for refresh of memory devices
Hiroki Noguchi, Hsinchu (TW); and Yih Wang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Apr. 8, 2022, as Appl. No. 17/716,446.
Application 17/716,446 is a continuation of application No. 16/996,788, filed on Aug. 18, 2020, granted, now 11,309,011.
Claims priority of provisional application 62/981,740, filed on Feb. 26, 2020.
Prior Publication US 2022/0230676 A1, Jul. 21, 2022
Int. Cl. G11C 11/406 (2006.01); G11C 11/4091 (2006.01); G11C 11/4076 (2006.01)
CPC G11C 11/40611 (2013.01) [G11C 11/4076 (2013.01); G11C 11/4091 (2013.01); G11C 11/40626 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A memory system, comprising:
a controller configured to refresh a memory array at a first temperature before a first refresh time that is acquired from a lookup table and corresponds to a time period for stored data in the memory array being lost at the first temperature,
wherein after the controller acquires a second refresh time from the lookup table, the controller is further configured to reset a refresh time period to refresh the memory array before the second refresh time, wherein the second refresh time corresponds to a time period for stored data in the memory array being lost at a second temperature different from the first temperature,
wherein the refresh time period corresponds to a time period after refreshing the memory array, and
when an operation temperature of the memory array changes from the second temperature to a third temperature, the controller is further configured to acquire a third refresh time from the lookup table when the second and third temperatures are in different refresh temperature intervals.