US 11,810,609 B2
Reference voltage management
Efrem Bolandrina, Alzano Lombardo (IT); and Ferdinando Bedeschi, Biassono (IT)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Dec. 28, 2021, as Appl. No. 17/563,395.
Application 17/563,395 is a continuation of application No. 16/877,161, filed on May 18, 2020, granted, now 11,217,293.
Application 16/877,161 is a continuation of application No. 16/381,702, filed on Apr. 11, 2019, granted, now 10,692,557, issued on Jun. 23, 2020.
Prior Publication US 2022/0199140 A1, Jun. 23, 2022
Int. Cl. G11C 11/00 (2006.01); G11C 11/22 (2006.01)
CPC G11C 11/2275 (2013.01) [G11C 11/221 (2013.01); G11C 11/2259 (2013.01); G11C 11/2273 (2013.01); G11C 11/2255 (2013.01); G11C 11/2257 (2013.01)] 20 Claims
OG exemplary drawing
 
14. A memory device, comprising:
a memory cell;
a switching component coupled to the memory cell;
a sense component coupled to the switching component;
a plurality of storage devices; and
a controller configured to cause the memory device to:
store in each of the plurality of storage devices at correspondingly different times, respective voltage differences between a first voltage and a second voltage associated with a plate line of the memory cell;
provide, to the switching component, a moving average of a voltage difference between the first voltage and the second voltage, based at least in part on the respective voltage differences stored in the plurality of storage devices; and
establish a conductive path between a digit line of the memory cell and the sense component based at least in part on providing the moving average of the voltage difference to the switching component.