US 11,809,081 B2
Organotin oxide hydroxide patterning compositions, precursors, and patterning
Stephen T. Meyers, Corvallis, OR (US); Jeremy T. Anderson, Corvallis, OR (US); Brian J. Cardineau, Corvallis, OR (US); Joseph B. Edson, Corvallis, OR (US); Kai Jiang, Corvallis, OR (US); Douglas A. Keszler, Corvallis, OR (US); and Alan J. Telecky, Albany, OR (US)
Assigned to Inpria Corporation, Corvallis, OR (US)
Filed by Inpria Corporation, Corvallis, OR (US)
Filed on Jun. 6, 2022, as Appl. No. 17/832,920.
Application 17/832,920 is a continuation of application No. 16/987,120, filed on Aug. 6, 2020, granted, now 11,537,048.
Application 16/987,120 is a continuation of application No. 16/238,779, filed on Jan. 3, 2019, granted, now 10,775,696, issued on Sep. 15, 2020.
Application 16/238,779 is a continuation of application No. 15/291,738, filed on Oct. 12, 2016, granted, now 10,228,618, issued on Mar. 12, 2019.
Claims priority of provisional application 62/297,540, filed on Feb. 19, 2016.
Claims priority of provisional application 62/240,812, filed on Oct. 13, 2015.
Prior Publication US 2022/0299878 A1, Sep. 22, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 7/16 (2006.01); G03F 7/004 (2006.01); G03F 7/38 (2006.01); C23C 16/40 (2006.01); C23C 14/08 (2006.01); C23C 16/455 (2006.01); G03F 7/30 (2006.01); G03F 7/20 (2006.01); G03F 7/32 (2006.01); G03F 7/40 (2006.01)
CPC G03F 7/168 (2013.01) [C23C 14/086 (2013.01); C23C 16/407 (2013.01); C23C 16/45523 (2013.01); C23C 16/45561 (2013.01); G03F 7/0042 (2013.01); G03F 7/0043 (2013.01); G03F 7/162 (2013.01); G03F 7/167 (2013.01); G03F 7/2004 (2013.01); G03F 7/30 (2013.01); G03F 7/325 (2013.01); G03F 7/38 (2013.01); G03F 7/40 (2013.01)] 29 Claims
OG exemplary drawing
 
1. A method for forming a radiation patternable organometallic coating, the method comprising:
depositing a tin composition having organic ligands and hydrolysable ligands to form a coating with a dry thickness from about 1 nanometers (nm) to about 50 nm,
wherein the organic ligands comprise radiation sensitive Sn—C bonds, and
wherein the depositing is by a vapor-based deposition process.