US 11,809,077 B2
Photoresist compositions and pattern formation methods
Thomas Cardolaccia, Natick, MA (US); Jason A. DeSisto, Hopkinton, MA (US); Choong-Bong Lee, Westborough, MA (US); Mingqi Li, Shrewsbury, MA (US); Tomas Marangoni, Marlborough, MA (US); Chunyi Wu, Shrewsbury, MA (US); Cong Liu, Shrewsbury, MA (US); and Gregory P. Prokopowicz, Worcester, MA (US)
Assigned to ROHM AND HAAS ELECTRONIC MATERIALS LLC, Marlborough, MA (US)
Filed by ROHM AND HAAS ELECTRONIC MATERIALS LLC, Marlborough, MA (US)
Filed on Mar. 11, 2021, as Appl. No. 17/198,749.
Claims priority of provisional application 63/058,953, filed on Jul. 30, 2020.
Prior Publication US 2022/0043342 A1, Feb. 10, 2022
Int. Cl. G03F 7/004 (2006.01); C08F 220/28 (2006.01); C08F 220/18 (2006.01); G03F 7/027 (2006.01)
CPC G03F 7/0045 (2013.01) [C08F 220/18 (2013.01); C08F 220/281 (2020.02); G03F 7/027 (2013.01)] 11 Claims
 
1. A photoresist composition, comprising:
a first polymer formed by free radical polymerization, the first polymer comprising polymerized units formed from a monomer comprising an ethylenically unsaturated double bond and an acid-labile group;
a photoacid generator;
a quencher of formula (1):

OG Complex Work Unit Chemistry
wherein: R1 is independently a hydrogen atom, C1-C20 linear, C3-C20 branched, or C3-20 cyclic alkyl, the alkyl optionally comprising an —O— group other than at an alpha-position with respect to the amide C(O), or C6-C20 aryl; R2 is independently a hydrogen atom, C1-C20 linear, C3-C20 branched, or C3-C20 cyclic alkyl, or C6-C20 aryl; L is C1-C20 linear or C3-C20 branched alkylene comprising one or more heteroatom-containing groups independently selected from —O—, or —S—; wherein each of R1, R2, and L may independently be substituted or unsubstituted; wherein the quencher is free of crosslinkable groups; and
a solvent.