US 11,809,076 B2
Cleaning method, method for forming semiconductor structure and system thereof
Wu-Hung Ko, Tainan (TW); Chung-Hung Lin, Tainan (TW); and Chih-Wei Wen, Tainan (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on May 27, 2022, as Appl. No. 17/826,267.
Application 17/826,267 is a division of application No. 16/943,881, filed on Jul. 30, 2020, granted, now 11,347,143.
Claims priority of provisional application 62/907,963, filed on Sep. 30, 2019.
Prior Publication US 2022/0291580 A1, Sep. 15, 2022
Int. Cl. G03F 1/82 (2012.01); H01L 21/67 (2006.01); G03F 7/00 (2006.01); B08B 7/00 (2006.01)
CPC G03F 1/82 (2013.01) [B08B 7/0035 (2013.01); B08B 7/0071 (2013.01); G03F 7/70033 (2013.01); G03F 7/70733 (2013.01); G03F 7/70925 (2013.01); H01L 21/67028 (2013.01); H01L 21/67225 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor structure, comprising:
receiving a semiconductive substrate;
inspecting a photomask prior to applying the photomask in an exposure operation on the semiconductive substrate;
performing the exposure operation on the semiconductive substrate in a first chamber by using the photomask when the photomask passing the inspection; and
performing a cleaning operation on the photomask in a second chamber when the photomask fails to pass the inspection, wherein the cleaning operation comprises:
providing hydrogen radicals to the second chamber; and
removing carbon-containing contaminants and oxygen-based contaminants on the photomask by having the hydrogen radicals reacting with the carbon-containing contaminants and the oxygen-based contaminants.