US 11,808,978 B2
Post-fabrication trimming of silicon ring resonators via integrated annealing
Andrew Knights, Dundas (CA); David Hagan, Mississauga (CA); and Benjamin Torres-Kulik, Ancaster (CA)
Assigned to McMaster University, Hamilton (CA)
Filed by McMaster University, Hamilton (CA)
Filed on Aug. 12, 2020, as Appl. No. 16/991,495.
Claims priority of provisional application 62/885,492, filed on Aug. 12, 2019.
Prior Publication US 2021/0048581 A1, Feb. 18, 2021
Int. Cl. G02B 6/134 (2006.01); G02B 6/12 (2006.01); H05B 3/12 (2006.01); H05B 1/02 (2006.01)
CPC G02B 6/1347 (2013.01) [G02B 6/12007 (2013.01); H05B 1/0233 (2013.01); H05B 3/12 (2013.01); G02B 2006/12138 (2013.01); G02B 2006/12142 (2013.01); G02B 2006/12145 (2013.01); G02B 2006/12169 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A method for post-fabrication trimming of a silicon ring resonator, the method comprising:
fabricating a heating element, wherein the heating element is separated from the silicon ring resonator;
subjecting the silicon ring resonator to energetic ion implantation, wherein the energetic ion implantation shifts a resonance of the silicon ring resonator towards the red side of the electro-magnetic spectrum; and
following the energetic ion implantation, annealing the silicon ring resonator, using the heating element, wherein the annealing shifts the resonance of the silicon ring resonator towards the blue side of the electro-magnetic spectrum.