CPC G02B 6/1347 (2013.01) [G02B 6/12007 (2013.01); H05B 1/0233 (2013.01); H05B 3/12 (2013.01); G02B 2006/12138 (2013.01); G02B 2006/12142 (2013.01); G02B 2006/12145 (2013.01); G02B 2006/12169 (2013.01)] | 10 Claims |
1. A method for post-fabrication trimming of a silicon ring resonator, the method comprising:
fabricating a heating element, wherein the heating element is separated from the silicon ring resonator;
subjecting the silicon ring resonator to energetic ion implantation, wherein the energetic ion implantation shifts a resonance of the silicon ring resonator towards the red side of the electro-magnetic spectrum; and
following the energetic ion implantation, annealing the silicon ring resonator, using the heating element, wherein the annealing shifts the resonance of the silicon ring resonator towards the blue side of the electro-magnetic spectrum.
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