US 11,808,796 B2
Pre-screening and tuning heterojunctions for topological quantum computer
Dmitry Pikulin, Vancouver (CA); Mason L Thomas, Santa Barbara, CA (US); Chetan Vasudeo Nayak, Santa Barbara, CA (US); Roman Mykolayovych Lutchyn, Santa Barbara, CA (US); Bas Nijholt, Delft (NL); Bernard Van Heck, Rotterdam (NL); Esteban Adrian Martinez, Copenhagen (DK); Georg Wolfgang Winkler, Santa Barbara, CA (US); Gijsbertus De Lange, Zoetermeer (NL); John David Watson, Delft (NL); Sebastian Heedt, Breda (NL); and Torsten Karzig, Goleta, CA (US)
Assigned to Microsoft Technology Licensing, LLC, Redmond, WA (US)
Filed by Microsoft Technology Licensing, LLC, Redmond, WA (US)
Filed on Feb. 15, 2022, as Appl. No. 17/651,222.
Claims priority of provisional application 63/161,946, filed on Mar. 16, 2021.
Prior Publication US 2022/0299551 A1, Sep. 22, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G01R 27/28 (2006.01); G01R 27/02 (2006.01); G06N 10/20 (2022.01); G01R 27/32 (2006.01); G01R 35/00 (2006.01); H10N 60/12 (2023.01); H10N 69/00 (2023.01); G01R 27/04 (2006.01); G01R 27/16 (2006.01)
CPC G01R 27/02 (2013.01) [G01R 27/28 (2013.01); G01R 27/32 (2013.01); G01R 35/005 (2013.01); G06N 10/20 (2022.01); G01R 27/04 (2013.01); G01R 27/16 (2013.01); H10N 60/12 (2023.02); H10N 69/00 (2023.02)] 18 Claims
OG exemplary drawing
 
1. A method to evaluate a semiconductor-superconductor heterojunction for use in a qubit register of a topological quantum computer, the method comprising:
measuring one or both of a radio-frequency (RF) junction admittance of the semiconductor-superconductor heterojunction and a sub-RF conductance including a non-local conductance of the semiconductor-superconductor heterojunction, to obtain mapping data and refinement data, wherein said measuring is enacted in first and second phases, wherein the mapping data is obtained in the first phase and the refinement data is obtained in the second phase, and wherein the second phase includes a scan of a sub-region of one or more regions of a parameter space found by analysis of the mapping data;
transitioning abruptly from the first phase to the second phase in dependence on the analysis of the mapping data;
finding by the analysis of the mapping data one or more regions of the parameter space consistent with an unbroken topological phase of the semiconductor-superconductor heterojunction; and
finding by analysis of the refinement data a boundary of the unbroken topological phase in the parameter space and a topological gap of the semiconductor-superconductor heterojunction for at least one of the one or more regions of the parameter space.