US 11,808,650 B2
Pressure sensing device with cavity and related methods
Alberto Pagani, Nova Milanese (IT); Federico Giovanni Ziglioli, pozzo d'adda (IT); and Bruno Murari, Monza (IT)
Assigned to STMicroelectronics S.r.l., Agrate Brianza (IT)
Filed by STMicroelectronics S.r.l., Agrate Brianza (IT)
Filed on Oct. 5, 2020, as Appl. No. 17/063,147.
Application 17/063,147 is a division of application No. 15/914,832, filed on Mar. 7, 2018, granted, now 10,794,783.
Application 15/914,832 is a continuation of application No. 14/626,153, filed on Feb. 19, 2015, granted, now 9,939,338, issued on Apr. 10, 2018.
Prior Publication US 2021/0018389 A1, Jan. 21, 2021
Int. Cl. G01L 5/00 (2006.01); G01L 1/18 (2006.01); G01L 1/20 (2006.01); F16B 31/02 (2006.01); G01L 5/24 (2006.01)
CPC G01L 5/0038 (2013.01) [F16B 31/028 (2013.01); G01L 1/18 (2013.01); G01L 1/20 (2013.01); G01L 5/243 (2013.01)] 24 Claims
OG exemplary drawing
 
1. A method, comprising:
experiencing, by a first pressure sensor in a pressure sensing system, an application of a first load by a first member in a structure on a second member in the structure, wherein the second member is positioned against the first member, and the first pressure sensor is carried in a first washer that is disposed between the first member and the second member;
detecting, by the first pressure sensor, a degree of a bending of a semiconductor die in the first pressure sensor, in response to the application of the first load;
generating, by a pressure sensing circuitry in the semiconductor die, a first output in accordance with the degree of the bending that is detected in the semiconductor die;
transmitting, by an integrated circuit (IC) interface in the semiconductor die, the first output to a first external antenna trace that is carried by a first substrate that is adjacent to the first pressure sensor; and
transmitting, by the first external antenna trace, the first output to an external system that monitors the pressure sensing system, wherein the first pressure sensor comprises:
the semiconductor die comprising an unsupported middle and two supported sides on either side of the unsupported middle, wherein the two supported sides are mounted on a support body; and
a cavity inside the first pressure sensor, wherein the cavity is disposed between the two supported sides, below the unsupported middle, and above the support body, wherein the IC interface comprises a transceiver circuit, and an internal antenna trace coupled to the transceiver circuit, and wherein the internal antenna trace is magnetically or electromagnetically coupled to the first external antenna trace, and wherein the internal antenna trace is disposed over an area where a supported side of the semiconductor die is mounted on the support body.