US 11,808,633 B2
Infrared thermopile sensor
Chein-Hsun Wang, Hsin-Chu (TW); Da-Jun Lin, Kaohsiung (TW); Chun-Chiang Chen, Hsin-Chu County (TW); Chih-Yung Tsai, Taichung (TW); Yu-Chih Liang, Hsinchu (TW); Ming Le, New Taipei (TW); Chen-Tang Huang, Hsinchu County (TW); Tung-Yang Lee, Hsinchu County (TW); and Jenping Ku, Hsinchu County (TW)
Assigned to ORIENTAL SYSTEM TECHNOLOGY INC., Hsin-Chu (TW)
Filed by ORIENTAL SYSTEM TECHNOLOGY INC., Hsin-Chu (TW)
Filed on Aug. 16, 2021, as Appl. No. 17/403,117.
Prior Publication US 2023/0047601 A1, Feb. 16, 2023
Int. Cl. G01J 5/00 (2022.01); G01J 5/14 (2006.01); G01J 5/02 (2022.01); G01K 7/06 (2006.01); G01K 7/02 (2021.01); G01J 5/04 (2006.01); H10N 10/817 (2023.01)
CPC G01J 5/14 (2013.01) [G01J 5/025 (2013.01); G01J 5/045 (2013.01); G01K 7/028 (2013.01); G01K 7/06 (2013.01); H10N 10/817 (2023.02)] 19 Claims
OG exemplary drawing
 
1. An infrared thermopile sensor, comprising:
an infrared sensing chip, comprising:
a first substrate, comprising a wire-bonding pad and two membrane structures configured by a front-side wet etching;
a first thermopile sensing element, disposed on one of the membrane structures and generating a temperature signal;
a second thermopile sensing element, disposed on another one of the membrane structures and adjacent to the first thermopile sensing element, and generating a compensation temperature signal; and
a front-end signal processing unit, disposed on the first substrate and electrically connected with the first thermopile sensing element and the second thermopile sensing element, the front-end signal processing unit comprising:
an ambient temperature sensing element, generating an ambient temperature information; and
a non-volatile memory, configured to store the ambient temperature information; a silicon cover, bonded to the infrared sensing chip by a wafer-level bonding, and comprising an infrared Fresnel lens focusing a thermal radiation of an object to the first thermopile sensing element, a size of the silicon cover being smaller than a size of the infrared sensing chip, and the wire-bonding pad exposed from the silicon cover;
a microcontroller chip, connected with the infrared sensing chip, and configured to receive the temperature signal, the compensation temperature signal and the ambient temperature information, and to compute to obtain a temperature adjustment information relative to a predetermined temperature according to an air temperature the ambient temperature information and a water vapor pressure information, to calculate a first temperature of the object according to the temperature signal, the compensation temperature signal and the temperature adjustment information, and to calculate a second temperature of the object according to the first temperature, wherein the water vapor pressure information is preset or imported, the microcontroller chip comprising:
a second substrate; and
a first metal layer, disposed on an upper surface of the second substrate and comprising a metal material with a low emissivity to reduce thermal disturbance from the microcontroller chip to the infrared sensing chip; and
a plurality of through silicon vias (TSVs), disposed in the second substrate;
a package substrate, configured to carry the microcontroller chip and to receive an output signal or an input signal of the microcontroller chip through the TSVs, and comprising a plurality of contacts disposed on a lower surface thereof, and the TSVs electrically connected to the contacts; and
a sealing encapsulation, configured to cover the package substrate, the microcontroller chip, the infrared sensing chip, and the silicon cover, and an upper surface of the silicon cover being exposed from the sealing encapsulation.