US 11,807,939 B2
Atomic layer deposition method for metal thin films
Fumikazu Mizutani, Sakado (JP); Shintaro Higashi, Sakado (JP); and Naoyuki Takezawa, Sakado (JP)
Assigned to KOJUNDO CHEMICAL LABORATORY CO., LTD., Sakado (JP)
Appl. No. 16/617,451
Filed by KOJUNDO CHEMICAL LABORATORY CO., LTD., Sakado (JP)
PCT Filed Jul. 13, 2018, PCT No. PCT/JP2018/026464
§ 371(c)(1), (2) Date Nov. 26, 2019,
PCT Pub. No. WO2019/017285, PCT Pub. Date Jan. 24, 2019.
Claims priority of application No. 2017-139151 (JP), filed on Jul. 18, 2017; and application No. 2017-139152 (JP), filed on Jul. 18, 2017.
Prior Publication US 2020/0087787 A1, Mar. 19, 2020
Int. Cl. C23C 16/455 (2006.01); C23C 16/18 (2006.01); H01L 21/285 (2006.01)
CPC C23C 16/45553 (2013.01) [C23C 16/18 (2013.01); H01L 21/28506 (2013.01)] 1 Claim
 
1. An atomic layer deposition (ALD) method for metal thin films comprising:
a process of supplying an organometallic complex having an alkyl ligand that coordinates to a noble metal into a reaction chamber in which a substrate is installed; and
a process of supplying a mixture gas containing a nucleophilic gas and an electrophilic gas into the reaction chamber wherein
the organometallic complex further has either or both of a hydride ligand and a phosphine ligand, in addition to the alkyl ligand,
the electrophilic gas is hydrogen and the nucleophilic gas is ammonia, and
the substrate is set at a temperature which is 3° C. or more lower than a thermal decomposition temperature of the organometallic complex in an inert gas;
the ALD method substantially not using either one of a gas in a plasma or radical state and a gas containing oxygen atoms.