CPC C23C 16/45553 (2013.01) [C23C 16/18 (2013.01); H01L 21/28506 (2013.01)] | 1 Claim |
1. An atomic layer deposition (ALD) method for metal thin films comprising:
a process of supplying an organometallic complex having an alkyl ligand that coordinates to a noble metal into a reaction chamber in which a substrate is installed; and
a process of supplying a mixture gas containing a nucleophilic gas and an electrophilic gas into the reaction chamber wherein
the organometallic complex further has either or both of a hydride ligand and a phosphine ligand, in addition to the alkyl ligand,
the electrophilic gas is hydrogen and the nucleophilic gas is ammonia, and
the substrate is set at a temperature which is 3° C. or more lower than a thermal decomposition temperature of the organometallic complex in an inert gas;
the ALD method substantially not using either one of a gas in a plasma or radical state and a gas containing oxygen atoms.
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