US 11,807,937 B2
Method and apparatus for forming a patterned layer of carbon, method of forming a patterned layer of material
Sonia Castellanos Ortega, Leiden (NL); Jan Verhoeven, Kockengen (NL); Joost Wilhelmus Maria Frenken, Leiden (NL); Pavlo Antonov, Valkenburg (NL); Nicolaas Ten Kate, Almkerk (NL); and Olivier Christian Maurice Lugier, Amsterdam (NL)
Assigned to ASML Netherlands B.V., Veldhoven (NL)
Appl. No. 16/969,088
Filed by ASML Netherlands B.V., Veldhoven (NL)
PCT Filed Feb. 26, 2019, PCT No. PCT/EP2019/054680
§ 371(c)(1), (2) Date Aug. 11, 2020,
PCT Pub. No. WO2019/166409, PCT Pub. Date Sep. 6, 2019.
Claims priority of application No. 18159654 (EP), filed on Mar. 2, 2018.
Prior Publication US 2021/0032743 A1, Feb. 4, 2021
Int. Cl. C23C 16/04 (2006.01); C23C 16/26 (2006.01); C23C 16/48 (2006.01); H01L 21/02 (2006.01); H01L 29/16 (2006.01)
CPC C23C 16/047 (2013.01) [C23C 16/26 (2013.01); C23C 16/482 (2013.01); C23C 16/483 (2013.01); H01L 21/02527 (2013.01); H01L 21/02636 (2013.01); H01L 29/1606 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A method comprising:
disposing a solid-state film on a first surface of a solid structure, the solid-state film being a carbon-containing precursor that is pentacene, polystyrene, or carbon-containing aromatic precursor molecules;
interacting an extreme ultraviolet radiation (EUV) beam with a patterning device to form a patterned EUV radiation beam;
irradiating, using the patterned EUV radiation beam, the surface of the solid structure including a selected portion of the solid-state film, wherein the patterned EUV radiation interacts with the selected portion of the solid-state film to cause the selected portion of the solid-state film to transform into an intermediate state prior to heating and wherein the selected portion is defined by the patterned EUV radiation beam; and
heating, in a presence of atomic hydrogen, the solid-state film to transform the intermediate state in the selected portion of the solid-state film into a patterned layer of carbon atoms on the first surface of the solid structure and to not transform the solid-state film outside of the selected portion into the patterned layer of carbon atoms,
wherein the atomic hydrogen acts to selectively clean away the solid-state film where the solid-state film has not been irradiated.