CPC C22C 29/08 (2013.01) [B22F 3/15 (2013.01); B22F 7/06 (2013.01); B24D 18/0009 (2013.01); C22C 29/005 (2013.01); C22C 29/067 (2013.01); E21B 10/5673 (2013.01); E21B 10/5735 (2013.01); B22F 2005/001 (2013.01); B22F 2998/10 (2013.01); C22C 26/00 (2013.01); E21B 10/55 (2013.01)] | 20 Claims |
1. A method of forming a supporting substrate for a cutting element, comprising:
forming a precursor composition comprising discrete WC particles, a binding agent, and discrete particles comprising Co, one or more of Be, Ga, Ge, and Sn, and one or more of C and W; and
subjecting the precursor composition to a consolidation process to form a consolidated structure including WC particles dispersed in a homogenized binder comprising Co, W, C, and one or more of Be, Ga, Ge, and Sn.
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