CPC C04B 37/021 (2013.01) [C04B 37/026 (2013.01); H05K 1/053 (2013.01); H05K 3/022 (2013.01); C04B 2237/402 (2013.01); C04B 2237/407 (2013.01); C04B 2237/704 (2013.01); C04B 2237/706 (2013.01); H05K 2201/068 (2013.01); Y10T 428/12535 (2015.01)] | 9 Claims |
1. A metal-ceramic substrate (1) comprising
an insulating layer (11) comprising a ceramic and having a first thickness (D1), and
a metallization layer (12) bonded to the insulation layer (11) and having a second thickness (D2),
wherein the metallization layer (12) is bonded to the insulation layer (11) by means of a direct copper bonding (DCB) process, direct aluminum bonding (DAB) process or an active soldering process
wherein the first thickness (D1) is less than 200 μm and the second thickness (D2) is greater than 200 μm and wherein the first thickness (D1) and the second thickness (D2) are dimensioned such that a ratio of
an amount of the difference between a thermal expansion coefficient of the metallization layer (12) and a thermal expansion coefficient of the metal-ceramic substrate (1) to
a thermal expansion coefficient of the metal-ceramic substrate (1) has a value less than 0.2.
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