US 11,807,517 B2
MEMS device comprising a membrane and an actuator
Dario Paci, Vittuone (IT); Domenico Giusti, Caponago (IT); and Irene Martini, Bergamo (IT)
Assigned to STMICROELECTRONICS S.r.l., Agrate Brianza (IT)
Filed by STMICROELECTRONICS S.r.l., Agrate Brianza (IT)
Filed on Mar. 22, 2021, as Appl. No. 17/208,918.
Application 17/208,918 is a continuation of application No. 16/752,321, filed on Jan. 24, 2020, granted, now 10,981,778.
Application 16/752,321 is a continuation of application No. 16/050,924, filed on Jul. 31, 2018, granted, now 10,683,200, issued on Jun. 16, 2020.
Claims priority of application No. 102017000091226 (IT), filed on Aug. 7, 2017.
Prior Publication US 2021/0206625 A1, Jul. 8, 2021
Int. Cl. B81B 3/00 (2006.01); B81B 7/02 (2006.01); H04N 23/57 (2023.01); H04N 23/67 (2023.01)
CPC B81B 3/0024 (2013.01) [B81B 3/0021 (2013.01); B81B 7/02 (2013.01); H04N 23/57 (2023.01); H04N 23/67 (2023.01); B81B 2201/032 (2013.01); B81B 2201/047 (2013.01); B81B 2203/0127 (2013.01); B81B 2203/0172 (2013.01); B81B 2203/0315 (2013.01); B81B 2203/04 (2013.01); B81B 2203/053 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
forming a first etch stop layer on a first surface of a substrate;
forming a first epitaxial layer on the first etch stop layer and on the first surface of the substrate;
forming a second etch stop layer on the first epitaxial layer;
forming a second epitaxial layer on the second etch stop layer;
forming a first piezoelectric actuator and a second piezoelectric actuator on the second epitaxial layer spaced apart from each other; and
forming a cavity extending through the substrate, the first epitaxial layer and the second etch stop layer.