CPC H10N 52/101 (2023.02) [G11C 11/161 (2013.01); G11C 11/18 (2013.01); H10B 61/22 (2023.02); H10N 50/01 (2023.02); H10N 50/10 (2023.02); H10N 50/85 (2023.02); H10N 52/80 (2023.02); G11C 11/1659 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01)] | 8 Claims |
1. A unit cell in an integrated circuit comprising a spin-orbit torque type magnetoresistance effect element and a control element,
wherein the spin-orbit torque type magnetoresistance effect element comprising:
a magnetoresistance effect element having a first ferromagnetic metal layer with a fixed magnetization direction, a second ferromagnetic metal layer with a varying magnetization direction, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer; and
spin-orbit torque wiring that extends in a first direction intersecting with a stacking direction of the magnetoresistance effect element and that is joined to the second ferromagnetic metal layer;
wherein
the magnetization of the second ferromagnetic metal layer is oriented in the stacking direction of the magnetoresistance effect element; and
the second ferromagnetic metal layer has shape anisotropy, such that a length along the first direction is greater than a length along a second direction orthogonal to the first direction and to the stacking direction, and
wherein
the control element is a transistor comprising a source electrode, a drain electrode and a channel;
the control element is arranged in a third direction from the source electrode to the drain electrode; and
the third direction is in parallel in the second direction.
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