US 11,793,087 B2
Magnetic tunnel junction structures and related methods
Shy-Jay Lin, Hsinchu (TW); and Mingyuan Song, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 13, 2021, as Appl. No. 17/374,799.
Application 17/374,799 is a division of application No. 16/430,343, filed on Jun. 3, 2019, granted, now 11,107,975.
Claims priority of provisional application 62/752,923, filed on Oct. 30, 2018.
Prior Publication US 2021/0343933 A1, Nov. 4, 2021
Int. Cl. H10N 50/80 (2023.01); H01F 10/32 (2006.01); G11C 11/16 (2006.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/85 (2023.01)
CPC H10N 50/80 (2023.02) [G11C 11/161 (2013.01); H01F 10/329 (2013.01); H01F 10/3259 (2013.01); H10B 61/22 (2023.02); H10N 50/01 (2023.02); H01F 10/3286 (2013.01); H10N 50/85 (2023.02)] 20 Claims
OG exemplary drawing
 
17. A method, comprising:
forming a transistor over a substrate, the transistor having a first source/drain terminal, a second source/drain terminal and a gate terminal;
forming a magnetoresistive random access memory cell over the transistor, the magnetoresistive random access memory cell including a magnetic tunnel junction structure and a spin-orbit torque structure adjacent to the magnetic tunnel junction structure;
forming a write signal line coupled to the gate terminal; and
forming a first current node coupled to the first source/drain terminal;
wherein a first end of the spin-orbit torque structure coupled to the second source/drain terminal, and a second end of the spin-orbit torque structure coupled to a second current node; and
wherein the forming the spin-orbit torque structure includes:
forming a first heavy metal layer, a second heavy metal layer stacked over the first heavy metal layer and a third heavy metal layer stacked over the second heavy metal layer;
diffusing a first plurality of molecules of a dielectric material scattered adjacent to an interface between the first heavy metal layer and the second heavy metal layer; and
diffusing a second plurality of molecules of a dielectric material scattered adjacent to an interface between the second heavy metal layer and the third heavy metal layer.