| CPC H10K 59/1315 (2023.02) [H01L 27/1259 (2013.01); H01L 21/02068 (2013.01)] | 6 Claims |
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1. A display device comprising:
a substrate;
a gate line disposed on the substrate;
a transistor including a part of the gate line; and
a light-emitting element connected to the transistor,
wherein the gate line includes:
a first layer including an aluminum alloy;
a second layer including titanium nitride; and
a third layer including metallic titanium nitride,
wherein an N/Ti molar ratio of the metallic titanium nitride is in a range from about 0.2 to about 0.75,
the third layer is in direct contact with the second layer,
the second layer is interposed between the first layer and the third layer,
in the second layer, a content of nitrogen is higher than a content of titanium,
in the third layer, a content of titanium is higher than a content of nitrogen,
the first layer is disposed closer to the substrate than the third layer,
the aluminum alloy of the first layer includes at least one among Ni, La, Nd, and Ge,
a content of a material except for aluminum in the aluminum alloy is 1 mol % or less, and greater than 0 mol %, and
the aluminum alloy of the first layer is not in direct contact with the metallic titanium nitride of the third layer to prevent an increase in resistance by minimizing diffusion of titanium into the aluminum alloy of the first layer.
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