US 11,793,011 B2
Quantum dot device and display device
Sung Woo Kim, Hwaseong-si (KR); Tae Ho Kim, Suwon-si (KR); Eun Joo Jang, Suwon-si (KR); Hongkyu Seo, Anyang-si (KR); Sang Jin Lee, Seoul (KR); Dae Young Chung, Suwon-si (KR); and Oul Cho, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jul. 28, 2021, as Appl. No. 17/387,281.
Application 17/387,281 is a continuation of application No. 16/034,442, filed on Jul. 13, 2018, abandoned.
Claims priority of application No. 10-2017-0155034 (KR), filed on Nov. 20, 2017.
Prior Publication US 2021/0359238 A1, Nov. 18, 2021
Int. Cl. H10K 50/115 (2023.01); H10K 50/11 (2023.01); H10K 50/81 (2023.01); H10K 50/82 (2023.01); H10K 50/17 (2023.01); H10K 50/18 (2023.01); H10K 101/40 (2023.01); H10K 101/30 (2023.01); H10K 71/00 (2023.01); H10K 50/15 (2023.01); H10K 71/12 (2023.01); H10K 85/10 (2023.01); H10K 102/00 (2023.01)
CPC H10K 50/115 (2023.02) [H10K 50/11 (2023.02); H10K 50/171 (2023.02); H10K 50/81 (2023.02); H10K 50/82 (2023.02); H10K 71/00 (2023.02); H10K 50/15 (2023.02); H10K 50/17 (2023.02); H10K 50/18 (2023.02); H10K 71/12 (2023.02); H10K 85/115 (2023.02); H10K 85/1135 (2023.02); H10K 2101/30 (2023.02); H10K 2101/40 (2023.02); H10K 2102/00 (2023.02); H10K 2102/331 (2023.02); H10K 2102/351 (2023.02); H10K 2102/361 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A quantum dot device, comprising:
a first electrode and a second electrode facing each other, a work function of the first electrode being greater than a work function of the second electrode;
a quantum dot layer between the first electrode and the second electrode, the quantum dot layer comprising a blue light-emitting cadmium-free quantum dot; and
an electron auxiliary layer between the quantum dot layer and the second electrode, the electron auxiliary layer being a single electron auxiliary layer comprising a mixture of a first nanoparticle and a second nanoparticle, each of the first nanoparticle and the second nanoparticle being a zinc-containing oxide, and
wherein a lowest unoccupied molecular orbital energy level of the electron auxiliary layer is greater than a lowest unoccupied molecular orbital energy level of the quantum dot layer, and a difference between the lowest unoccupied molecular orbital energy level of the quantum dot layer and the lowest unoccupied molecular orbital energy level of the electron auxiliary layer is less than about 1.1 electronvolts.