CPC H10K 10/50 (2023.02) [G06N 3/065 (2023.01); H10K 10/82 (2023.02); H10K 19/202 (2023.02); H10K 71/10 (2023.02); H10K 85/111 (2023.02); H10K 85/151 (2023.02)] | 12 Claims |
1. A memristor device comprising:
a first electrode;
a second electrode disposed to be spaced apart from the first electrode; and
a resistance change layer including a copolymer between the first electrode and the second electrode;
wherein the copolymer is a copolymer of a first monomer and a second monomer, and a first metal ion diffusivity of a first polymer formed from the first monomer is faster than a second metal ion diffusivity of a second polymer formed from the second monomer.
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