US 11,793,006 B2
Memristor device, method of fabricating thereof, synaptic device including memristor device and neuromorphic device including synaptic device
Sangsu Park, Gyeonggi-do (KR); Sung-Yool Choi, Daejeon (KR); Sung Gap Im, Daejeon (KR); Sang Yoon Yang, Sejong-si (KR); and Jungyeop Oh, Daejeon (KR)
Assigned to SK hynix Inc., Gyeonggi-do (KR); and Korea Advanced Institute of Science and Technology, Daejeon (KR)
Filed by SK hynix Inc., Gyeonggi-do (KR); and Korea Advanced Institute of Science and Technology, Daejeon (KR)
Filed on Aug. 4, 2021, as Appl. No. 17/394,276.
Claims priority of application No. 10-2020-0098219 (KR), filed on Aug. 5, 2020.
Prior Publication US 2022/0045289 A1, Feb. 10, 2022
Int. Cl. H01L 51/50 (2006.01); H10K 10/50 (2023.01); G06N 3/065 (2023.01); H10K 10/82 (2023.01); H10K 19/00 (2023.01); H10K 71/10 (2023.01); H10K 85/10 (2023.01)
CPC H10K 10/50 (2023.02) [G06N 3/065 (2023.01); H10K 10/82 (2023.02); H10K 19/202 (2023.02); H10K 71/10 (2023.02); H10K 85/111 (2023.02); H10K 85/151 (2023.02)] 12 Claims
OG exemplary drawing
 
1. A memristor device comprising:
a first electrode;
a second electrode disposed to be spaced apart from the first electrode; and
a resistance change layer including a copolymer between the first electrode and the second electrode;
wherein the copolymer is a copolymer of a first monomer and a second monomer, and a first metal ion diffusivity of a first polymer formed from the first monomer is faster than a second metal ion diffusivity of a second polymer formed from the second monomer.