CPC H10B 43/27 (2023.02) [H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 43/10 (2023.02); H10B 51/10 (2023.02); H10B 51/20 (2023.02)] | 31 Claims |
1. A three-dimensional (3D) memory structure for memory cells, comprising:
a plurality of oxide layers;
a plurality of word line layers,
wherein the plurality of oxide layers and the plurality of word line layers are alternately stacked in a first direction; and
a plurality of double channel holes extending through the plurality of oxide layers and the plurality of word line layers in the first direction,
wherein the plurality of double channel holes have a peanut-shaped cross-section in a second direction that is transverse to the first direction.
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