US 11,792,549 B2
Image sensor with a row driver including a transmission control signal generator
Eunsub Shim, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Nov. 9, 2021, as Appl. No. 17/522,021.
Claims priority of application No. 10-2021-0039839 (KR), filed on Mar. 26, 2021.
Prior Publication US 2022/0311965 A1, Sep. 29, 2022
Int. Cl. H04N 25/766 (2023.01); H01L 27/146 (2006.01); H04N 25/778 (2023.01); H04N 25/779 (2023.01); G06T 3/00 (2006.01); G06T 3/40 (2006.01); G06T 7/80 (2017.01)
CPC H04N 25/766 (2023.01) [G06T 3/0018 (2013.01); G06T 3/4046 (2013.01); G06T 7/80 (2017.01); H01L 27/14616 (2013.01); H04N 25/778 (2023.01); H04N 25/779 (2023.01)] 19 Claims
OG exemplary drawing
 
1. An image sensor, comprising:
a pixel array comprising a plurality of pixels arranged in a matrix, wherein each of the pixels comprises a photoelectric conversion element configured to generate and accumulate photocharges based on an amount of external incident light, a transmission transistor configured to transmit the photocharges generated by the photoelectric conversion element to a floating diffusion node, and a reset transistor configured to reset the floating diffusion node based on a pixel power voltage, wherein the photoelectric conversion element includes a terminal to which a pixel reference voltage is applied; and
a row driver configured to control the pixels, wherein the row driver comprises a transmission control signal generator configured to provide a transmission control signal to a gate electrode of the transmission transistor,
wherein the transmission control signal generator comprises:
a first transistor of a first conductivity type and including a source electrode to which a first voltage is applied;
a second transistor of the first conductivity type and including a source electrode connected to a drain electrode of the first transistor;
a third transistor of a second conductivity type and including a source electrode to which a second voltage is applied, the second voltage being higher than the first voltage; and
a fourth transistor of the second conductivity type and including a source electrode connected to a drain electrode of the third transistor,
wherein an ON resistance of the second transistor is different from an ON resistance of the first transistor.