US 11,791,610 B2
Semiconductor laser device manufacturing method and semiconductor laser device
Hitoshi Sakuma, Tokyo (JP)
Assigned to Mitsubishi Electric Corporation, Tokyo (JP)
Appl. No. 17/252,840
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
PCT Filed Aug. 20, 2018, PCT No. PCT/JP2018/030657
§ 371(c)(1), (2) Date Dec. 16, 2020,
PCT Pub. No. WO2020/039475, PCT Pub. Date Feb. 27, 2020.
Prior Publication US 2021/0126433 A1, Apr. 29, 2021
Int. Cl. H01S 5/227 (2006.01); H01S 5/042 (2006.01); H01S 5/02 (2006.01)
CPC H01S 5/2275 (2013.01) [H01S 5/0208 (2013.01); H01S 5/04256 (2019.08)] 11 Claims
OG exemplary drawing
 
1. A semiconductor laser device manufacturing method comprising:
forming a stacked structure in which a lower cladding layer, an active layer and an upper cladding layer are stacked on an InP substrate in a shape having a mesa stripe structure;
forming a first insulation film on a side face of the mesa stripe structure and lower portions on the left and right of the mesa stripe structure by a sputtering method, the lower portions are lower than the mesa stripe structure;
forming a second insulation film thinner than the first insulation film, on the first insulation film by a plasma CVD method at a film forming temperature higher than that when the first insulation film has been formed; and
forming a first electrode on a top surface of the mesa stripe structure, and forming a second electrode on a back surface of the InP substrate.