US 11,791,535 B2
Non-galvanic interconnect for planar RF devices
Mikhail Nikolaevich Makurin, Moscow (RU); Elena Aleksandrovna Shepeleva, Moscow (RU); and Chongmin Lee, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Sep. 28, 2021, as Appl. No. 17/487,426.
Claims priority of application No. 2020131751 (RU), filed on Sep. 28, 2020; and application No. 10-2021-0044803 (KR), filed on Apr. 6, 2021.
Prior Publication US 2022/0102835 A1, Mar. 31, 2022
Int. Cl. H01Q 1/22 (2006.01); H01L 23/498 (2006.01); H01Q 1/52 (2006.01); H05K 1/02 (2006.01)
CPC H01Q 1/2283 (2013.01) [H01Q 1/52 (2013.01); H05K 1/0242 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A radio frequency (RF) system comprising:
a first RF device and a second RF device separated by a dielectric layer,
each of the first RF device and the second RF device including a plurality of pads disposed on a surface of the device, the pads being surrounded by a common electrode, the common electrode configured as a grounded metal shield,
wherein pads of the first RF device and pads of the second RF device face each other to provide capacitive coupling between the pads and the common electrodes, and
wherein the RF system is configured to transmit signals between the first RF device and the second RF device through the pads.