US 11,791,446 B2
Micro-device with strengthened connecting layers
Cui-Cui Sheng, Tianjin (CN); Du-Xiang Wang, Tianjin (CN); Bing-Xian Chung, Tianjin (CN); Chun-Yi Wu, Tianjin (CN); and Chao-Yu Wu, Xiamen (CN)
Assigned to XIAMEN SAN'AN OPTOELECTRONICS CO., LTD., Fujian (CN)
Filed by XIAMEN SAN'AN OPTOELECTRONICS CO., LTD.
Filed on Sep. 23, 2019, as Appl. No. 16/579,736.
Application 16/579,736 is a continuation in part of application No. PCT/CN2018/078704, filed on Mar. 12, 2018.
Claims priority of application No. 201710253226.6 (CN), filed on Apr. 18, 2017.
Prior Publication US 2020/0020840 A1, Jan. 16, 2020
Int. Cl. H01L 33/62 (2010.01); H01L 25/075 (2006.01)
CPC H01L 33/62 (2013.01) [H01L 25/0753 (2013.01); H01L 2933/0066 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A micro device, comprising:
a securing layer;
a plurality of micro device units that are separated from each other and that are spaced apart from said securing layer in a laminating direction, each of said micro device units having a plurality of layers disposed on one another along the laminating direction, being surrounded by said securing layer, and cooperating with said securing layer to define a cavity therebetween, the cavity formed squarely between the securing layer and each of the micro device units in a lateral direction or each of the laminating and lateral directions; and
a connecting layer that directly interconnects said micro device units in at least one group of two or more and that is connected to said securing layer so that said micro device units are connected to said securing layer through said connecting layer,
wherein said connecting layer includes a plurality of connecting portions, each of which directly interconnects said micro device units of a respective one of the groups of said micro device units in an extending direction traverse to the laminating direction, each of said connecting portions being formed integrally with and extending from at least one of said layers of each of said micro device units in the respective one of the groups, said connecting layer being made of one of a gallium phosphide based material and a gallium nitride based material, and
wherein said cavities are formed by removing a sacrificial layer in direct contact with said micro device units and said securing layer.