US 11,791,438 B2
Heterostructure for an optoelectronic device
Mikhail Gaevski, Columbia, SC (US); Alexander Dobrinsky, Houston, TX (US); Maxim S. Shatalov, Mt. Sinai, NY (US); and Michael Shur, Vienna, VA (US)
Assigned to Sensor Electronic Technology, Inc., Columbia, SC (US)
Filed by Sensor Electronic Technology, Inc., Columbia, SC (US)
Filed on Mar. 11, 2021, as Appl. No. 17/198,491.
Application 17/198,491 is a continuation of application No. 16/012,943, filed on Jun. 20, 2018, granted, now 10,950,747.
Application 16/012,943 is a continuation in part of application No. 15/200,575, filed on Jul. 1, 2016, granted, now 10,050,172.
Claims priority of provisional application 62/522,251, filed on Jun. 20, 2017.
Claims priority of provisional application 62/187,707, filed on Jul. 1, 2015.
Prior Publication US 2021/0202791 A1, Jul. 1, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/32 (2010.01); H01S 5/343 (2006.01); H01S 5/32 (2006.01); H01L 33/02 (2010.01); H01L 21/683 (2006.01); H01L 21/02 (2006.01)
CPC H01L 33/0075 (2013.01) [H01L 21/6835 (2013.01); H01L 33/007 (2013.01); H01L 33/0093 (2020.05); H01L 33/02 (2013.01); H01L 33/06 (2013.01); H01L 33/32 (2013.01); H01S 5/3209 (2013.01); H01S 5/34333 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/02458 (2013.01); H01L 21/02664 (2013.01); H01L 2221/68368 (2013.01); H01L 2221/68381 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of fabricating a group III nitride heterostructure, the method comprising:
epitaxially growing a sacrificial layer over a substrate structure, wherein the substrate structure includes a substrate and a set of group III nitride layers directly on the substrate, wherein the sacrificial layer is grown directly on a surface of a group III nitride layer in the set of group III nitride layers, wherein each of the set of group III nitride layers in the substrate structure have an aluminum molar fraction of at least 0.5, and wherein the sacrificial layer includes a plurality of sublayers, the plurality of sublayers including: an essentially continuous sublayer and a non-continuous sublayer;
epitaxially growing the group III nitride heterostructure directly on the sacrificial layer; and
decomposing the sacrificial layer by irradiating the sacrificial layer with a laser through the substrate structure to at least partially release the group III nitride heterostructure from the substrate structure, wherein the sacrificial layer is configured to result in absorption of the irradiated laser light at least an order of magnitude higher than any of the set of group III nitride layers in the substrate structure.