CPC H01L 31/1804 (2013.01) [B28D 5/042 (2013.01); C01B 33/037 (2013.01); H01L 31/028 (2013.01); C01P 2002/52 (2013.01); C01P 2004/61 (2013.01); C01P 2006/40 (2013.01); C01P 2006/80 (2013.01)] | 9 Claims |
1. A method of purifying silicon, the method comprising:
subjecting silicon particles having a first purity to a silicon dioxide reduction operation to form a first product;
combining the first product with a hydrochloric acid source in a fluid bed reactor and expelling hydrogen gas at the fluid bed reactor to form trichorosilane;
subjecting the trichlorosilane to a dust filtration process;
subsequent to subjecting the trichlorosilane to the dust filtration process, subjecting the trichlorosilane to a trichlorosilane condensation process to form a second product;
distilling the second product to form purified trichlorosilane;
processing the purified trichlorosilane through a silicon evaporator and introducing hydrogen to form a third product; and
processing the third product through a chemical vapor deposition reactor to form silicon particles having a second purity greater than the first purity.
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