US 11,791,433 B2
Single photon avalanche diode
Soon Yeol Park, Icheon-si (KR)
Assigned to SK HYNIX INC., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on May 14, 2021, as Appl. No. 17/320,605.
Claims priority of application No. 10-2021-0018102 (KR), filed on Feb. 9, 2021.
Prior Publication US 2022/0254946 A1, Aug. 11, 2022
Int. Cl. H01L 31/107 (2006.01); H01L 31/0352 (2006.01)
CPC H01L 31/107 (2013.01) [H01L 31/03529 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A single photon avalanche diode, comprising:
a substrate having an upper surface and a lower surface that are opposite to each other;
a plurality of junction structures formed in the substrate, each of the plurality of junction structures including a first portion exposed to the upper surface of the substrate and a second portion being in contact with an adjacent junction structure; and
an isolation region positioned between first portions of the plurality of junction structures,
wherein each of the plurality of junction structures comprises:
a first impurity region having a first conductive type and corresponding to a part of the first portion that is configured to receive an anode bias; and
a second impurity region having a second conductive type and corresponding to another part of the first portion that is configured to receive a cathode bias, the second impurity region formed to surround the first impurity region and contacting the first impurity region.