CPC H01L 31/02963 (2013.01) [H01L 31/1828 (2013.01); H01L 31/1864 (2013.01)] | 16 Claims |
1. A method for treating a photovoltaic semiconductor absorber layer comprising:
supplying a reducing agent to produce a reducing environment;
contacting at least a portion of an absorber layer with a passivating agent while the absorber layer is in the reducing environment, wherein the absorber layer is doped with a group V dopant, and wherein the absorber layer comprises a II-VI semiconductor; and
annealing the absorber layer with the passivating agent while in the reducing environment at a selected temperature and a selected pressure for a selected treatment duration, wherein the reducing environment comprises at least a trace amount of oxygen and a ratio of the partial pressure of the reducing agent to a partial pressure of the oxygen is at least 3.
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