CPC H01L 29/7869 (2013.01) [G02F 1/1337 (2013.01); G02F 1/13394 (2013.01); G02F 1/133345 (2013.01); G02F 1/134309 (2013.01); H01L 27/1225 (2013.01); H01L 29/045 (2013.01); H01L 29/24 (2013.01); H01L 29/51 (2013.01); H01L 29/66969 (2013.01); H01L 29/78696 (2013.01); G02F 2202/10 (2013.01); H01L 21/02565 (2013.01); H10K 59/1213 (2023.02)] | 10 Claims |
1. A semiconductor device comprising:
an oxide semiconductor film over a substrate;
a source electrode and a drain electrode electrically connected to the oxide semiconductor film;
a gate electrode; and
a gate insulating film between the gate electrode and the oxide semiconductor film,
wherein the gate insulating film includes silicon and oxygen,
wherein a concentration of silicon in the oxide semiconductor film is lower than or equal to 1.0 at. %,
wherein the oxide semiconductor film includes a region where a concentration of silicon is decreased from an interface with the gate insulating film toward an inside of the oxide semiconductor film, and
wherein the oxide semiconductor film includes a crystal portion.
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