US 11,791,405 B2
Transistor having an emitter region with a silicide spaced apart from a base contact
Alexei Sadovnikov, Sunnyvale, CA (US); and Natalia Lavrovskaya, Sunnyvale, CA (US)
Assigned to Texas Instruments Incorporated, Dallas, TX (US)
Filed by TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US)
Filed on Jul. 14, 2021, as Appl. No. 17/375,598.
Application 17/375,598 is a division of application No. 15/859,292, filed on Dec. 29, 2017, granted, now 11,094,806.
Prior Publication US 2021/0343860 A1, Nov. 4, 2021
Int. Cl. H01L 29/739 (2006.01); H01L 29/66 (2006.01); H01L 21/265 (2006.01); H01L 21/768 (2006.01); H01L 29/45 (2006.01); H01L 21/02 (2006.01); H01L 29/49 (2006.01); H01L 21/311 (2006.01); H01L 29/08 (2006.01); H01L 21/324 (2006.01)
CPC H01L 29/7393 (2013.01) [H01L 21/02164 (2013.01); H01L 21/26513 (2013.01); H01L 21/31105 (2013.01); H01L 21/324 (2013.01); H01L 21/76889 (2013.01); H01L 29/0808 (2013.01); H01L 29/45 (2013.01); H01L 29/4916 (2013.01); H01L 29/66325 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A transistor comprising:
a collector region formed over a semiconductor substrate and having majority carriers of a first type, and a collector contact that intersects a top surface of the semiconductor substrate;
a base region formed over the semiconductor substrate and having majority carriers of a second type, the base region having a dopant concentration greater than 1.0*1016 cm−3 at a depth of 0.2 μm, and a base contact that intersects the top surface of the semiconductor substrate;
an emitter region having majority carriers of the first type, the emitter region having a first area and a second area, wherein the base contact surrounds the emitter region and the collector contact surrounds the base contact;
silicide, wherein the silicide is formed in the second area of the emitter region;
a gate oxide over the base region; and
a gate material on the gate oxide, the gate material and the gate oxide having a first sidewall, wherein the silicide formed in the second area of the emitter region is separated from the first sidewall by a distance of at least 0.1 microns.