US 11,791,394 B2
Metal oxide semiconductor field-effect transistor (MOSFET) devices and manufacturing methods thereof
Sangjun Yun, Hwaseong-si (KR); Uihui Kwon, Hwaseong-si (KR); Seongnam Kim, Seoul (KR); and Hyoshin Ahn, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd.
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Nov. 9, 2022, as Appl. No. 18/53,777.
Application 18/053,777 is a continuation of application No. 17/206,832, filed on Mar. 19, 2021, granted, now 11,522,064.
Claims priority of application No. 10-2020-0051817 (KR), filed on Apr. 28, 2020; and application No. 10-2020-0115517 (KR), filed on Sep. 9, 2020.
Prior Publication US 2023/0068212 A1, Mar. 2, 2023
Int. Cl. H01L 29/49 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/28 (2006.01)
CPC H01L 29/4966 (2013.01) [H01L 21/28088 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A manufacturing method of a metal oxide semiconductor field-effect transistor (MOSFET) device, the manufacturing method comprising:
forming an active area having a fin shape, protruding from a semiconductor substrate and extending in a first direction;
forming, on the semiconductor substrate, a dummy gate structure extending in a second direction that traverses the first direction and covering a portion of the active area;
forming two spacers respectively on side surfaces of the dummy gate structure, the side surfaces of the dummy gate structure being spaced apart from each other in the first direction;
removing the dummy gate structure between the two spacers;
forming a high-k layer between the two spacers;
etching inner side surfaces of the two spacers to increase distance between the two spacers;
forming a first metal layer on an upper surface of the high-k layer;
forming a work function control (WFC) layer on the first metal layer; and
forming a second metal layer on the WFC layer,
wherein a lower surface of the WFC layer is longer than a first interface between a lower surface of the first metal layer and the upper surface of the high-k layer in the first direction.