CPC H01L 29/4238 (2013.01) [H01L 29/401 (2013.01); H01L 29/42368 (2013.01); H01L 29/66681 (2013.01); H01L 29/7816 (2013.01)] | 20 Claims |
1. A structure for an extended-drain metal-oxide-semiconductor device, the structure comprising:
a substrate having a top surface and a first well;
a source region in the substrate;
a drain region in the first well;
a buffer dielectric layer that is positioned on the top surface of the substrate adjacent to the drain region and that fully overlaps the first well; and
a gate electrode laterally positioned between the source region and the drain region, the gate electrode including a first portion that overlaps with the buffer dielectric layer, and the first portion of the gate electrode including a plurality of fingers arranged over the buffer dielectric layer and a plurality of notches arranged fully over the buffer dielectric layer.
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