US 11,791,392 B2
Extended-drain metal-oxide-semiconductor devices with a notched gate electrode
Bong Woong Mun, Singapore (SG); Upinder Singh, Singapore (SG); and Jeoung Mo Koo, Singapore (SG)
Assigned to GlobalFoundries Singapore Pte. Ltd.
Filed by GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore (SG)
Filed on Jun. 8, 2021, as Appl. No. 17/341,858.
Prior Publication US 2022/0393009 A1, Dec. 8, 2022
Int. Cl. H01L 29/423 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/4238 (2013.01) [H01L 29/401 (2013.01); H01L 29/42368 (2013.01); H01L 29/66681 (2013.01); H01L 29/7816 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A structure for an extended-drain metal-oxide-semiconductor device, the structure comprising:
a substrate having a top surface and a first well;
a source region in the substrate;
a drain region in the first well;
a buffer dielectric layer that is positioned on the top surface of the substrate adjacent to the drain region and that fully overlaps the first well; and
a gate electrode laterally positioned between the source region and the drain region, the gate electrode including a first portion that overlaps with the buffer dielectric layer, and the first portion of the gate electrode including a plurality of fingers arranged over the buffer dielectric layer and a plurality of notches arranged fully over the buffer dielectric layer.