US 11,791,391 B1
Inverters, and related memory devices and electronic systems
Kamal M. Karda, Boise, ID (US); Haitao Liu, Boise, ID (US); Durai Vishak Nirmal Ramaswamy, Boise, ID (US); Karthik Sarpatwari, Boise, ID (US); and Richard E. Fackenthal, Carmichael, CA (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Mar. 18, 2022, as Appl. No. 17/655,479.
Int. Cl. H01L 29/423 (2006.01); H01L 27/02 (2006.01); H01L 27/092 (2006.01); G11C 5/02 (2006.01); H10B 10/00 (2023.01)
CPC H01L 29/42372 (2013.01) [G11C 5/025 (2013.01); H01L 27/0207 (2013.01); H01L 27/092 (2013.01); H10B 10/12 (2023.02)] 20 Claims
OG exemplary drawing
 
1. An inverter, comprising:
a transistor;
an additional transistor overlying the transistor; and
a hybrid gate electrode interposed between and shared by the transistor and the additional transistor, the hybrid gate electrode comprising:
a region overlying a channel structure of the transistor and having a first material composition;
an additional region overlying the region and underlying an additional channel structure of the additional transistor, the additional region having a second material composition different than the first material composition of the region; and
a further region interposed between the region and the additional region.