US 11,791,385 B2
Wide bandgap transistors with gate-source field plates
Yifeng Wu, Goleta, CA (US); Primit Parikh, Goleta, CA (US); Umesh Mishra, Montecito, CA (US); and Scott Sheppard, Chapel Hill, NC (US)
Assigned to Wolfspeed, Inc., Durham, NC (US)
Filed by Yifeng Wu, Goleta, CA (US); Primit Parikh, Goleta, CA (US); Umesh Mishra, Montecito, CA (US); and Scott Sheppard, Chapel Hill, NC (US)
Filed on Mar. 11, 2005, as Appl. No. 11/78,265.
Prior Publication US 2006/0202272 A1, Sep. 14, 2006
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/40 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01)
CPC H01L 29/402 (2013.01) [H01L 29/404 (2013.01); H01L 29/7787 (2013.01); H01L 29/2003 (2013.01)] 29 Claims
OG exemplary drawing
 
1. A transistor, comprising:
an active region comprising a channel layer, said channel layer comprising a two dimensional electron gas (2DEG) region;
a source electrode and a drain electrode in electrical contact with said active region;
a metal gate between said source electrode and said drain electrode and on said active region;
a metal first field plate that is integral with said gate;
a first spacer layer on said active region between said gate and said drain electrode and between said gate and said source electrode,
wherein said first field plate extends on said first spacer layer over a vertical projection of said active region from a first vertical edge of said gate toward said drain electrode and from a second vertical edge of said gate toward said source electrode, and wherein said second vertical edge is opposite from said first vertical edge;
a second spacer layer;
a second field plate on said second spacer layer, said second spacer layer separating said second field plate from said gate and from said first field plate; and
a conductive path electrically connecting said second field plate to said source electrode, wherein in a plan view said conductive path comprises a first portion that extends from the second field plate to beyond the vertical projection of the active region, and a second portion that extends from beyond the vertical projection of the active region to the source electrode, and wherein the second field plate and the source electrode are on the active region.