CPC H01L 28/57 (2013.01) [H10B 12/033 (2023.02); H10B 12/315 (2023.02); H10B 12/34 (2023.02)] | 10 Claims |
1. A method for fabricating a capacitor, comprising:
forming a first conductive layer;
forming a dielectric layer stack in which a leakage blocking material is embedded, on the first conductive layer;
forming a dielectric interface layer on the dielectric layer stack;
forming a high work function interface layer on the dielectric interface layer; and
forming a second conductive layer on the high work function interface layer,
wherein the dielectric interface layer comprises a material having a higher electronegativity than the dielectric layer stack.
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