US 11,791,373 B2
Dielectric thin film, capacitor including the dielectric thin film, and method for manufacturing the dielectric thin film
Hyungjun Kim, Suwon-si (KR); Changsoo Lee, Seoul (KR); Chan Kwak, Yongin-si (KR); and Euncheol Do, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on May 3, 2021, as Appl. No. 17/306,310.
Claims priority of application No. 10-2020-0159091 (KR), filed on Nov. 24, 2020.
Prior Publication US 2022/0165840 A1, May 26, 2022
Int. Cl. H01L 21/00 (2006.01); H01L 49/02 (2006.01)
CPC H01L 28/56 (2013.01) [H01L 28/65 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A dielectric having a three-dimensional nanoscale shape, the dielectric comprising:
an oxide including a nanoscale three-dimensional (3D) perovskite-type crystal structure, the oxide represented by RAMBOC where R is a divalent element, M is a pentavalent element, 1.3<B/A<1.7, and 9.0≤C<10.0,
wherein the dielectric is electrically neutral, and
wherein the oxide is electrically neutral.