US 11,791,372 B2
Capacitors of semiconductor device capable of operating in high frequency operation environment
Jaeho Lee, Seoul (KR); Boeun Park, Hwaseong-si (KR); Younggeun Park, Suwon-si (KR); and Jooho Lee, Hwaseong-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Nov. 16, 2020, as Appl. No. 17/98,915.
Claims priority of application No. 10-2020-0048312 (KR), filed on Apr. 21, 2020.
Prior Publication US 2021/0328004 A1, Oct. 21, 2021
Int. Cl. H01L 23/66 (2006.01); H01L 49/02 (2006.01)
CPC H01L 28/56 (2013.01) [H01L 23/66 (2013.01); H01L 28/75 (2013.01); H01L 2223/6661 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A capacitor comprising:
a first electrode layer;
a dielectric layer on the first electrode layer; and
a second electrode layer on the dielectric layer,
wherein the dielectric layer comprises a plurality of unit dielectric layers sequentially stacked and configured to be in contact with each other, a first unit dielectric layer of the plurality of unit dielectric layers comprises two sub-dielectric layers, and a second unit dielectric layer of the plurality of unit dielectric layers comprises two sub-dielectric layers,
wherein the two sub-dielectric layers each comprise comprising a first sub-dielectric layer and a second sub-dielectric layer, the first sub-dielectric layer and the second sub-dielectric layer having different dielectric constants and conductivities, and are connected in series,
wherein the capacitance of the dielectric layer converges to the capacitance of the unit dielectric layer as a result of a conductivity difference between the first and second sub-dielectric layers, and
wherein thicknesses of the plurality of unit dielectric layers are the same with each other.