US 11,791,366 B2
Solid-state imaging device and electronic device
Hideo Kido, Kanagawa (JP)
Assigned to SONY GROUP CORPORATION, Tokyo (JP)
Filed by SONY GROUP CORPORATION, Tokyo (JP)
Filed on Nov. 2, 2021, as Appl. No. 17/517,406.
Application 17/517,406 is a continuation of application No. 15/546,110, granted, now 11,195,873, previously published as PCT/JP2016/051801, filed on Jan. 22, 2016.
Claims priority of application No. 2015-021076 (JP), filed on Feb. 5, 2015.
Prior Publication US 2022/0059602 A1, Feb. 24, 2022
Int. Cl. H01L 27/146 (2006.01); H04N 23/75 (2023.01); H04N 25/57 (2023.01); H04N 25/76 (2023.01); H04N 25/621 (2023.01)
CPC H01L 27/14656 (2013.01) [H01L 27/14614 (2013.01); H01L 27/14643 (2013.01); H04N 23/75 (2023.01); H04N 25/57 (2023.01); H04N 25/622 (2023.01); H04N 25/76 (2023.01)] 18 Claims
OG exemplary drawing
 
1. A solid-state imaging device comprising:
a photo diode formed on a substrate;
a floating diffusion which accumulates a signal charge read from the photo diode; and
a gate electrode comprising:
a planar gate electrode; and
a plurality of vertical gate electrodes formed from a surface of the substrate in a depth direction in a region between the photo diode and the floating diffusion; and
an overflow path formed in a region interposed between the plurality of vertical gate electrodes, wherein the overflow path is formed in a region shallower than the plurality of vertical gate electrodes.