US 11,791,355 B2
Image sensor
Axel Crocherie, Grenoble (FR)
Assigned to STMicroelectronics (Crolles 2) SAS, Crolles (FR)
Filed by STMicroelectronics (Crolles 2) SAS, Crolles (FR)
Filed on Oct. 22, 2020, as Appl. No. 17/77,966.
Claims priority of application No. 1911935 (FR), filed on Oct. 24, 2019.
Prior Publication US 2021/0126034 A1, Apr. 29, 2021
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/14627 (2013.01) [H01L 27/1463 (2013.01); H01L 27/14607 (2013.01); H01L 27/14685 (2013.01); H01L 27/1462 (2013.01)] 17 Claims
OG exemplary drawing
 
1. An image sensor, comprising:
a plurality of pixels, each of the pixels including:
a silicon photoconversion region, the photoconversion region of each pixel extends upwardly from a rear surface to a front surface opposite to the rear surface and extends laterally between four lateral surfaces, the rear surface configured to receive at least one ray, the photoconversion region including:
a first oblique surface coupling a first one of the four lateral surfaces to the front surface;
a second oblique surface coupling the front surface to a second one of the four lateral surfaces opposite to the first lateral surface; and
a third oblique surface coupling the second lateral surface to the rear surface; and
a material at least partially surrounding the photoconversion region, the material having a refraction index smaller than a refraction index of silicon, an interface between the photoconversion region and the material being configured so that the at least one ray reaching the photoconversion region of the pixel undergoes a total reflection or a plurality of successive total reflections at the interface.