US 11,791,353 B2
Solid state imaging device, manufacturing method of the same, and electronic equipment
Hiroshi Tayanaka, Kanagawa (JP); Yuuji Inoue, Nagasaki (JP); and Masashi Nakata, Kanagawa (JP)
Assigned to SONY GROUP CORPORATION, Tokyo (JP)
Filed by SONY GROUP CORPORATION, Tokyo (JP)
Filed on Oct. 7, 2021, as Appl. No. 17/496,545.
Application 17/496,545 is a continuation of application No. 16/867,141, filed on May 5, 2020, granted, now 11,211,415.
Application 16/867,141 is a continuation of application No. 15/722,960, filed on Oct. 2, 2017, granted, now 10,680,022, issued on Jun. 9, 2020.
Application 15/722,960 is a continuation of application No. 14/764,685, granted, now 9,780,139, issued on Oct. 3, 2017, previously published as PCT/JP2014/006045, filed on Dec. 3, 2014.
Claims priority of application No. 2013-257294 (JP), filed on Dec. 12, 2013; and application No. 2014-109412 (JP), filed on May 27, 2014.
Prior Publication US 2022/0045113 A1, Feb. 10, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/14621 (2013.01) [H01L 27/14605 (2013.01); H01L 27/14623 (2013.01); H01L 27/14627 (2013.01); H01L 27/14634 (2013.01); H01L 27/14656 (2013.01); H01L 27/14685 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An imaging device comprising:
a first pixel configured to receive green light, the first pixel including:
a first photoelectric conversion region,
a first on-chip lens, and
a first light shield disposed between the first photoelectric conversion region and the first on-chip lens, wherein the first photelectric conversion region is overlapped by the first light shield in a plan view;
a second pixel disposed adjacent to the first pixel and configured to receive red light, the second pixel including:
a second photoelectric conversion region,
a second on-chip lens, and
a second light shield disposed between the second photoelectric conversion region and the second on-chip lens, wherein the second photelectric conversion region is overlapped by the second light shield in the plan view; and
a third pixel disposed adjacent to the first pixel and configured to receive white light, the third pixel including:
a third photoelectric conversion region,
a third on-chip lens, and
a third light shield disposed between the third photoelectric conversion region and the third on-chip lens, wherein the third photelectric conversion region is overlapped by the third light shield in the plan view,
wherein an area of the first light shield is less than an area of the third light shield and greater than an area of the second light shield.