US 11,791,352 B2
Display panel and display device
Wei Cui, Shenzhen (CN); Miao Jiang, Shenzhen (CN); Jiangbo Yao, Shenzhen (CN); Lixuan Chen, Shenzhen (CN); and Xin Zhang, Shenzhen (CN)
Assigned to SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD., Shenzhen (CN)
Appl. No. 17/57,663
Filed by SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD., Shenzhen (CN)
PCT Filed Oct. 30, 2020, PCT No. PCT/CN2020/125198
§ 371(c)(1), (2) Date Nov. 21, 2020,
PCT Pub. No. WO2022/047974, PCT Pub. Date Mar. 10, 2022.
Claims priority of application No. 202010906002.2 (CN), filed on Sep. 1, 2020.
Prior Publication US 2022/0310672 A1, Sep. 29, 2022
Int. Cl. H01L 27/144 (2006.01); G06F 3/042 (2006.01); H01L 31/101 (2006.01); H01L 31/113 (2006.01); H10K 59/60 (2023.01)
CPC H01L 27/1443 (2013.01) [G06F 3/0421 (2013.01); H01L 27/1446 (2013.01); H01L 31/1013 (2013.01); H01L 31/1136 (2013.01); H10K 59/60 (2023.02)] 18 Claims
OG exemplary drawing
 
1. A display panel, comprising:
a plurality of light-sensing regions arranged in an array;
a light-sensing circuit disposed in each of the plurality of light-sensing regions, wherein the light-sensing circuit comprises a light-sensing transistor, the light-sensing transistor comprises a substrate, a metal oxide active layer, a gate layer, a gate insulating layer, a source/drain layer, and a quantum dot layer, the quantum dot layer is in contact with the metal oxide active layer, the quantum dot layer is configured to absorb interactive light emitted by an interactive light source, a wavelength of the interactive light is greater than a maximum absorption wavelength of the metal oxide active layer, and the light-sensing transistor is configured to convert a light intensity signal of the interactive light into an electrical signal; and
a position detection circuit electrically connected to the light-sensing circuit and configured to determine an irradiation position of the interactive light according to the electrical signal,
wherein the light-sensing circuit further comprises a first switching transistor;
a gate of the light-sensing transistor is connected to a scan signal line, a first electrode of the light-sensing transistor is connected to a power high electric potential signal line, and a second electrode of the light-sensing transistor is connected to a gate of the first switching transistor; and
a first electrode of the first switching transistor is connected to the power high electric potential signal line, a second electrode of the first switching transistor is connected to an electrical signal reading line, and the electrical signal reading line is connected to the position detection circuit.