US 11,791,341 B2
Radio-frequency loss reduction for integrated devices
John Sonkoly, Laguna Niguel, CA (US); and Erik Johan Norberg, Santa Barbara, CA (US)
Assigned to OpenLight Photonics, Inc., Goleta, CA (US)
Filed by OpenLight Photonics, Inc., Goleta, CA (US)
Filed on Sep. 16, 2021, as Appl. No. 17/477,092.
Application 17/477,092 is a continuation of application No. 16/863,223, filed on Apr. 30, 2020, granted, now 11,164,893.
Prior Publication US 2022/0005832 A1, Jan. 6, 2022
Int. Cl. H01L 27/12 (2006.01); H01L 21/84 (2006.01); H01L 23/528 (2006.01)
CPC H01L 27/1203 (2013.01) [H01L 21/84 (2013.01); H01L 23/528 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A radio-frequency (RF) structure comprising:
a substrate comprising a semiconductor device layer disposed on an insulating layer;
formed in or on the semiconductor device layer, a semiconductor device structure of an integrated RF device; and
disposed above the semiconductor device layer, at least one metallization structure to carry an RF signal to or from the integrated RF device,
wherein the semiconductor device layer, at least over a region that at least partially surrounds the at least one metallization structure, but not in any region in which the semiconductor device structure is formed, comprises implanted ions that increase an electrical resistivity of the semiconductor device layer.