US 11,791,293 B2
Semiconductor device and method of manufacturing the same
Wen Hung Huang, Kaohsiung (TW); Yan Wen Chung, Kaohsiung (TW); and Wei Chu Sun, Kaohsiung (TW)
Assigned to ADVANCED SEMICONDUCTOR ENGINEERING, INC., Kaohsiung (TW)
Filed by Advanced Semiconductor Engineering, Inc., Kaohsiung (TW)
Filed on Sep. 20, 2021, as Appl. No. 17/480,123.
Application 17/480,123 is a continuation of application No. 16/508,219, filed on Jul. 10, 2019, granted, now 11,127,697.
Prior Publication US 2022/0005771 A1, Jan. 6, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/40 (2006.01); H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 23/66 (2006.01); H01L 23/498 (2006.01); H01L 23/00 (2006.01)
CPC H01L 23/66 (2013.01) [H01L 23/49822 (2013.01); H01L 23/562 (2013.01); H01L 2223/6616 (2013.01); H01L 2223/6677 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
an antenna zone comprising an antenna layer, a first insulation layer, and a second insulation layer between the antenna layer and the first insulation layer, wherein a thickness of the first insulation layer is different from a thickness of the second insulation layer;
a semiconductor component disposed adjacent to the first insulation layer;
a first protection layer encapsulating the semiconductor component;
a connector adjacent to the semiconductor component, wherein a portion of the connector is exposed from the first protection layer; and
a second protection layer covering the antenna zone.