US 11,791,279 B2
Semiconductor device with hybrid channel
Tatsunori Isogai, Yokkaichi (JP); Masaki Noguchi, Yokkaichi (JP); Tatsufumi Hamada, Nagoya (JP); and Shinichi Sotome, Yokkaichi (JP)
Assigned to Kioxia Corporation, Tokyo (JP)
Filed by Kioxia Corporation, Tokyo (JP)
Filed on Sep. 14, 2020, as Appl. No. 17/20,047.
Claims priority of application No. 2020-041271 (JP), filed on Mar. 10, 2020.
Prior Publication US 2021/0287998 A1, Sep. 16, 2021
Int. Cl. H01L 23/552 (2006.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01); H01L 21/324 (2006.01)
CPC H01L 23/552 (2013.01) [H01L 21/324 (2013.01); H10B 43/27 (2023.02); H10B 43/35 (2023.02)] 9 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a stacked body comprising first films and second films that are alternately stacked;
a light shielding film provided in a specific layer of the stacked body and having a higher optical absorptivity than that of the second films; and
a channel film extending in the stacked body in a stacking direction, wherein
the channel film comprises a first part located on an upper side than the light shielding film in the stacking direction and containing a monocrystalline semiconductor,
the first films are conductive films,
a material of the first films differs from a material of the light shielding film,
a first plurality of the first films is provided above the light shielding film in the stack,
a second plurality of the first films is provided below the light shielding film in the stack,
the channel film comprises a second part located on a lower side of the light shielding film in the stacking direction and comprises polycrystalline semiconductor, and
the light shielding film is disposed at a position in the stack corresponding to a junction between the first and second parts.